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the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. 1999, 2000 mos field effect transistor pa1792 switching n- and p-channel power mos fet data sheet document no. g14557ej3v0ds00 (3rd edition) date published april 2003 ns cp(k) printed in japan the mark shows major revised points. description the pa1792 is n- and p-channel mos field effect transistors designed for motor drive application of hdd and so on. features ? low on-state resistance n-channel r ds(on)1 = 26 m ? max. (v gs = 10 v, i d = 3.4 a) r ds(on)2 = 36 m ? max. (v gs = 4.5 v, i d = 3.4 a) r ds(on)3 = 42 m ? max. (v gs = 4.0 v, i d = 3.4 a) p-channel r ds(on)1 = 36 m ? max. (v gs = ? 10 v, i d = ? 2.9 a) r ds(on)2 = 54 m ? max. (v gs = ? 4.5 v, i d = ? 2.9 a) r ds(on)3 = 65 m ? max. (v gs = ? 4.0 v, i d = ? 2.9 a) ? low input capacitance n-channel c iss = 760 pf typ. p-channel c iss = 900 pf typ. ? built-in g-s protection diode ? small and surface mount package (power sop8) ordering information part number package pa1792g power sop8 remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit: mm) 1.27 0.12 m 6.0 0.3 4.4 0.40 +0.10 ?0.05 0.78 max. 0.05 min. 1.8 max. 1.44 0.8 0.5 0.2 0.15 +0.10 ?0.05 5.37 max. 0.10 14 85 1 2 7, 8 3 4 5, 6 : source 1 : gate 1 : drain 1 : source 2 : gate 2 : drain 2 n-channel p-channel equivalent circuit n-channel p-channel source body diode gate protection diode gate drain source body diode gate protection diode gate drain
data sheet g14557ej3v0ds 2 pa1792 absolute maximum ratings (t a = 25c. all terminals are connected.) parameter symbol n-channel p-channel unit drain to source voltage (v gs = 0 v) v dss 30 ? 30 v gate to source voltage (v ds = 0 v) v gss 20 m 20 v drain current (dc) i d(dc) 6.8 m 5.8 a drain current (pulse) note1 i d(pulse) 27.2 m 23.2 a total power dissipation (1 unit) note2 p t 1.7 w total power dissipation (2 units) note2 p t 2.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on ceramic substrate of 2000 mm 2 x 1.6 mm
data sheet g14557ej3v0ds 3 pa1792 electrical characteristics (t a = 25c. all terminals are connected.) n-channel characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 10 a gate leakage current i gss v gs = 16 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.1 2.5 v forward transfer admittance note | y fs |v ds = 10 v, i d = 3.4 a 3.0 7.5 s drain to source on-state resistance note r ds(on)1 v gs = 10 v, i d = 3.4 a 20.5 26 m ? r ds(on)2 v gs = 4.5 v, i d = 3.4 a 27 36 m ? r ds(on)3 v gs = 4.0 v, i d = 3.4 a 31 42 m ? input capacitance c iss v ds = 10 v 760 pf output capacitance c oss v gs = 0 v 250 pf reverse transfer capacitance c rss f = 1 mhz 95 pf turn-on delay time t d(on) v dd = 15 v, i d = 3.4 a 20 ns rise time t r v gs = 10 v 140 ns turn-off delay time t d(off) r g = 10 ? 50 ns fall time t f 30 ns total gate charge q g i d = 6.8 a 14 nc gate to source charge q gs v dd = 24 v 2 nc gate to drain charge q gd v gs = 10 v 5 nc body diode forward voltage note v f(s-d) i f = 6.8 a, v gs = 0 v 0.86 v reverse recovery time t rr i f = 6.8 a, v gs = 0 v 30 ns reverse recovery charge q rr di/dt = 100 a/ s20nc note pulse: pw 350 s, duty cycle 2% test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma
data sheet g14557ej3v0ds 4 pa1792 p-channel characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1 a gate leakage current i gss v gs = m 16 v, v ds = 0 v m 10 a gate cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1 ma ? 1.5 ? 2.0 ? 2.5 v forward transfer admittance note | y fs |v ds = ? 10 v, i d = ? 2.9 a 3.5 8.0 s drain to source on-state resistance note r ds(on)1 v gs = ? 10 v, i d = ? 2.9 a 30 36 m ? r ds(on)2 v gs = ? 4.5 v, i d = ? 2.9 a 43 54 m ? r ds(on)3 v gs = ? 4.0 v, i d = ? 2.9 a 49 65 m ? input capacitance c iss v ds = ? 10 v 900 pf output capacitance c oss v gs = 0 v 300 pf reverse transfer capacitance c rss f = 1 mhz 120 pf turn-on delay time t d(on) v dd = ? 15 v, i d = ? 2.9 a 23 ns rise time t r v gs = ? 10 v 220 ns turn-off delay time t d(off) r g = 10 ? 90 ns fall time t f 70 ns total gate charge q g i d = ? 5.8 a 17 nc gate to source charge q gs v dd = ? 24 v 2.5 nc gate to drain charge q gd v gs = ? 10 v 4.0 nc body diode forward voltage note v f(s-d) i f = 5.8 a, v gs = 0 v 0.85 v reverse recovery time t rr i f = 5.8 a, v gs = 0 v 40 ns reverse recovery charge q rr di/dt = 100 a/ s30nc note pulse: pw 350 s, duty cycle 2% test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs ( ? ) 10% 90% v gs 10% 0 i d ( ? ) 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = ? 2 ma
data sheet g14557ej3v0ds 5 pa1792 typical characteristics (t a = 25c) (1) n-channel derating factor of forward bias safe operating area t a - ambient temperature - ?c dt - percentage of rated power - % 0 0 20 40 60 80 100 120 140 160 20 40 60 80 100 total power dissipation vs. ambient temperature t a - ambient temperature - ? c p t - total power dissipation - w/package 0 0 20 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 mounted on ceramic substrate of 2000 mm 2 x 1.6 mm 2 units 1 unit forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 0.1 0.01 1 10 100 1 10 100 i d(pulse) r ds(on) limited (at v gs = 10 v) i d(dc) 10 ms 0.1 100 ms 1 ms power dissipation limited single pulse, 1 unit, mounted on ceramic substrate of 2000 mm 2 x 1.6 mm pw = 100 s transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ? c/w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse, 1 unit, mounted on ceramic substrate of 2000 mm 2 x 1.6 mm 100 r th(ch-a) = 73.5 ? c/w
data sheet g14557ej3v0ds 6 pa1792 forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 0.1 12345 1 10 100 pulsed v ds = 10 v t a = 125 ? c 75 ? c 25 ? c ? 25 ? c drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 0.8 1.2 1.6 10 0.4 pulsed 0 5 20 30 35 25 v gs = 10 v 4.0 v 4.5 v 15 forward transfer admittance vs. drain current i d - drain current - a |y fs | - forward transfer admittance - s v ds = 10 v pulsed 1 1 10 100 10 100 0.1 0.1 75 ? c 125 ? c t a = ? 25 ? c 25 ? c drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 10 10 15 pulsed 0 5 70 100 60 0 80 50 40 30 20 90 i d = 4.0 a 6.8 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 1 10 100 20 0.1 40 60 80 100 4.5 v v gs = 4.0 v 0 pulsed 10 v gate cut-off voltage vs. channel temperature t ch - channel temperature - ? c v gs(off) - gate cut-off voltage - v v ds = 10 v i d = 1 ma ? 50 0 150 50 100 1.0 2.0 3.0
data sheet g14557ej3v0ds 7 pa1792 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ? c r ds(on) - drain to source on-state resistance - m ? 10 ? 50 20 0 50 100 150 30 50 40 v gs = 4.5 v 10 v pulsed source to drain diode forward voltage v sd - source to drain voltage - v i f - diode forward current - a 0.1 0 1 10 100 0.2 1.0 1.2 pulsed 0.4 0.6 0.8 1.4 0 v v gs = 10 v capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 10 0.1 100 1000 10000 1 10 100 v gs = 0 v f = 1 mhz c oss c iss c rss switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 0.1 1000 100 10 1 1 10 100 v dd = 15 v v gs = 10 v r g = 10 ? t d(on) t d(off) t f t r reverse recovery time vs. drain current i d - drain current - a t rr - reverse recovery time - ns 0.1 1 10 100 1000 100 10 1 di/dt = 100 a/ s v gs = 0 v v gs - gate to source voltage - v dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 10 202530 16 14 12 10 8 6 4 2 0 i d = 6.8 a 515 5 0 15 25 40 35 30 20 10 v dd = 24 v 15 v 6 v v gs v ds
data sheet g14557ej3v0ds 8 pa1792 (2) p-channel derating factor of forward bias safe operating area t a - ambient temperature - ? c dt - percentage of rated power - % 0 0 20 40 60 80 100 120 140 160 20 40 60 80 100 total power dissipation vs. ambient temperature t a - ambient temperature - ? c p t - total power dissipation - w/package 0 0 20 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 mounted on ceramic substrate of 2000 mm 2 x 1.6 mm 2 units 1 unit forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a ? 0.1 ? 0.01 ? 1 ? 10 ? 100 ? 1 ? 10 ? 100 ? 0.1 i d(pulse) r ds(on) limited (at v gs = ? 10 v) i d(dc) 10 ms 100 ms power dissipation limited single pulse, 1 unit, mounted on ceramic substrate of 2000 mm 2 x 1.6 mm pw = 100 s 1 ms transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ? c/w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse, 1 unit, mounted on ceramic substrate of 2000 mm 2 x 1.6 mm 100 r th(ch-a) = 73.5 ? c/w
data sheet g14557ej3v0ds 9 pa1792 forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a ? 0.001 ? 0.1 ? 0.01 0 ? 1 ? 2 ? 3 ? 4 ? 1 ? 10 ? 100 pulsed v ds = ? 10 v t a = 150 ? c 75 ? c 25 ? c ? 25 ? c drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 ? 0.8 ? 1.2 ? 10 ? 0.4 pulsed 0 ? 5 ? 20 ? 30 ? 25 v gs = ? 10 v ? 4.0 v ? 4.5 v ? 15 forward transfer admittance vs. drain current i d - drain current - a |y fs | - forward transfer admittance - s v ds = ? 10 v pulsed ? 1 1 10 100 ? 10 ? 100 0.1 ? 0.1 ? 0.01 ? 0.001 75 ? c 150 ? c t a = ? 25 ? c 25 ? c drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 10 ? 10 ? 15 pulsed 0 ? 5 i d = ? 1.2 a ? 5.8 a 60 0 50 40 30 20 drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? ? 1 ? 10 ? 100 20 ? 0.1 40 60 80 100 ? 10 v ? 4.5 v v gs = ? 4.0 v pulsed 0 gate cut-off voltage vs. channel temperature v gs(off) - gate cut-off voltage - v v ds = ? 10 v i d = ? 1 ma ? 50 0 150 50 100 0 ? 1.0 ? 3.0 ? 2.0 t ch - channel temperature - ? c
data sheet g14557ej3v0ds 10 pa1792 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ? c r ds(on) - drain to source on-state resistance - m ? 0 ? 50 20 0 50 100 150 40 80 100 60 v gs = ? 4.0 v ? 4.5 v ? 10 v pulsed source to drain diode forward voltage v sd - source to drain voltage - v i f - diode forward current - a 0.01 0.1 0 1 10 100 0.2 1.0 1.2 pulsed 0.4 0.6 0.8 1.4 0 v v gs = ? 4.5 v capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 10 ? 0.1 100 1000 10000 ? 1 ? 10 ? 100 v gs = 0 v f = 1 mhz c oss c iss c rss switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns ? 0.1 10000 1000 100 10 1 ? 1 ? 10 ? 100 v dd = ? 15 v v gs = ? 10 v r g = 10 ? t d(on) t d(off) t f t r reverse recovery time vs. drain current i d - drain current - a t rr - reverse recovery time - ns ? 0.1 ? 1 ? 10 ? 100 1000 100 10 1 di/dt = 100 a/ s v gs = 0 v v gs - gate to source voltage - v dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 01020 ? 12 ? 10 ? 8 ? 6 ? 4 ? 2 0 i d = ? 5.8 a 515 ? 5 0 ? 10 ? 15 ? 25 ? 20 ? 30 v gs v ds v dd = ? 24 v ? 15 v ? 6 v
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